Shapes of Epitaxially Grown Quantum Dots

Part I Nanostructure design and structural properties of epitaxially grown quantum dots and nanowires

Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

We have investigated the vertical organization and evolution of 1-, 5-, 10-, and 20-layer stacks of molecular beam epitaxially grown self-assembled InAs/GaAs quantum dots using high resolution and large-scale cross-sectional scanning tunneling microscopy. We report results regarding the evolution of the dot sizes and shapes, and the assembly of vertically organized columns of stacked dots. As t...

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates